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Relationship between Lattice Energy and an Ionic Ratio in II–VI and III–V Semiconductors
Author(s) -
Koh A. H.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199809)209:1<25::aid-pssb25>3.0.co;2-0
Subject(s) - ionic bonding , semiconductor , lattice (music) , lattice energy , plasmon , materials science , work (physics) , chemistry , condensed matter physics , ion , physics , crystallography , thermodynamics , crystal structure , optoelectronics , quantum mechanics , acoustics
Interesting linear relationships have been found between plasmon energy ℏω p and an ionic ratio in II–VI and III–V semiconductors. Values of ℏω p calculated from the present work bear a close proximity to those found by Haight (1968).