Premium
Vertex Correction for a Quasi‐Two‐Dimensional Electron–Hole Plasma Including Strain Effects
Author(s) -
Tong C.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199808)208:2<397::aid-pssb397>3.0.co;2-u
Subject(s) - condensed matter physics , band gap , hamiltonian (control theory) , electron , electronic band structure , random phase approximation , valence (chemistry) , vertex (graph theory) , physics , lattice constant , materials science , quantum mechanics , mathematics , mathematical optimization , graph , discrete mathematics , diffraction
The contribution of the second‐order self‐energy to the band‐gap reduction due to exchange and correlation effects is evaluated by including the valence‐band mixing for a quasi‐two‐dimensional electron–hole plasma. Based on the screened, effective interaction within the random‐phase approximation, the change of valence band structure due to band mixing has been discussed by using the Luttinger‐Kohn Hamiltonian as a function of the compressive strain. The present results applied to the In x Ga 1− x As/InGaAsP quantum well systems lattice‐matched to InP exhibit that the vertex correction due to second‐order self‐energy is enhanced with increasing compressive strain and sheet carrier density, and in addition, with decreasing carrier density, it is significantly contributive to the band‐gap reduction due to exchange and correlation effects.