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Scattering and Lifetime of Hot Excitons Interacting with LO‐Phonons in InBr and InI Polar Semiconductors
Author(s) -
Riera R.,
Rosas R.A.,
Marín J.L.,
Sotolongo O.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199806)207:2<393::aid-pssb393>3.0.co;2-c
Subject(s) - exciton , physics , scattering , biexciton , phonon , semiconductor , atomic physics , condensed matter physics , phonon scattering , electron , optics , quantum mechanics
Scattering probabilities and lifetime for a “hot” Wannier‐Mott exciton which interacts with LO‐phonons in InBr and InI polar semiconductors are obtained for T = 0. The calculations were performed for exciton states with principal quantum number n = 2 in the states l = 1, m = 0 and l = 1, m = ±1, when electron and hole effective masses are equal ( m e = m h ). The results obtained can be used to explain the special characteristic of secondary radiation emission spectrum measured by Yoshida et al. in 1985. In the latter work, the scattering lines show an alterating intensity which can be accounted for only if the electron and hole effective masses are nearly equal. All computation was performed for different scattering probabilities of the excitons, namely: intra‐band ( W s ), inter‐exciton band ( W 2→1 ), disintegration into the continuous spectrum ( W d ), as well as the lifetime of the exciton in both states. The results show that W s is larger than W 2→1 , even in the case m e = m h , for a wide range of kinetic energy of the excitons. A comparison of these results with those for the case of excitons in the state n = 1 is also made.