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A Semiclassical Approach to the Electron Gas in Two‐Dimensional Semiconductor Structures
Author(s) -
Quang Doan Nhat,
Tung Nguyen Huyen
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199805)207:1<111::aid-pssb111>3.0.co;2-p
Subject(s) - semiclassical physics , fermi gas , semiconductor , electron , physics , condensed matter physics , heterojunction , gaussian , singularity , enhanced data rates for gsm evolution , coherent potential approximation , quantum , quantum mechanics , mathematics , electronic structure , mathematical analysis , telecommunications , computer science
A theory is developed of the density of states (DOS) of the two‐dimensional electron gas (2D EG) in semiconductor heterostructures, taking into account the effect of disorder caused by some random field existing in the sample. For a smooth random field, the calculation is carried out within its Gaussian statistics and a semiclassical approach. A simple closed expression thus obtained includes the classical DOS and its quantum correction as well, which describe the DOS of the 2D EG in explicit dependence on the rms of the potential and of the force of the random field. The disorder effect is found to smear out the step‐like singularity of the DOS at an unperturbed band edge of the ideal 2D EG into a tail deep below the band edge. A detailed treatment is given of the case when the disorder is due to remote ionized impurities, which are distributed randomly or correlated in the sample.