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Binding Energy of the Donor–Confined LO Phonon System in Quantum Well Wire Structures
Author(s) -
Moukhliss S.,
Fliyou M.,
EsSbai N.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199804)206:2<593::aid-pssb593>3.0.co;2-7
Subject(s) - phonon , condensed matter physics , bound state , quantum wire , binding energy , ground state , shallow donor , electron , physics , coupling (piping) , quantum , impurity , quantum dot , atomic physics , quantum mechanics , materials science , doping , metallurgy
We have calculated the effects of the electron–confined LO phonon interactions on the ground bound state of a shallow donor impurity located on the axis of the quantum well wire (QWW) as a function of the size of the QWW. The results indicate that the effect of electron–confined LO phonon coupling on the binding energy increases as the confinement length increases and this effect is much more pronounced than that in quasi‐two‐dimensional quantum well structures.