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Photoelectrical Properties of Thermally Deposited Amorphous As 50 Se 50 Films
Author(s) -
Iovu M.,
Shutov S.,
Rebeja S.,
Kolomeyko E.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199804)206:2<583::aid-pssb583>3.0.co;2-b
Subject(s) - photoconductivity , materials science , excitation , chalcogenide , amorphous solid , homopolar motor , condensed matter physics , steady state (chemistry) , transient (computer programming) , non equilibrium thermodynamics , chalcogenide glass , optoelectronics , molecular physics , chemistry , physics , crystallography , thermodynamics , quantum mechanics , computer science , magnet , operating system
The excitation spectrum, steady‐state and transient characteristics of photoconductivity in amorphous thermally deposited chalcogenide AsSe films were studied. Besides the excitation of nonequilibrium holes by optical transitions from the valence band tail to the conduction band an additional channel of hole generation from a donor‐like defect state with energy E d — E v = 1.5 eV was revealed. The defect is associated with the presence of homopolar As–As bonds. The steady‐state and transient photoconductivity characteristics are adequately interpreted in the frame of a model, in which transport and recombination of nonequilibrium holes are controlled by exponentially distributed hole traps with the distribution parameter kT * = 0.039 eV.