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Quantum Interference Effects in Highly Doped n‐ZnSe Epitaxy Layers Grown by MBE
Author(s) -
Shao H.,
Gerschütz J.,
Scholl S.,
Schäfer H.,
Jobst B.,
Hommel D.,
Landwehr G.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199804)206:2<575::aid-pssb575>3.0.co;2-7
Subject(s) - condensed matter physics , magnetoresistance , molecular beam epitaxy , epitaxy , doping , weak localization , electron , interference (communication) , materials science , quantum interference , metal , metal–insulator transition , magnetic field , chemistry , physics , superconductivity , nanotechnology , quantum mechanics , channel (broadcasting) , engineering , electrical engineering , layer (electronics) , metallurgy
Magnetotransport investigations of quantum interference effects at temperatures down to 0.35 K in a series of highly n‐doped MBE‐grown ZnSe epitaxy layers with electron densities from 8.2×10 17 to 7.5×10 18 cm —3 are presented. We observed a negative magnetoresistance in all samples studied. The change of magnetoconductivity Δσ xx ( B ) shows a linear dependence on the square root of the magnetic field. The slope of the √ B dependence approaches the universal value predicted by weak localization (WL) theory when the temperature is reduced to 0.35 K and the electron density is well on the metallic side of the metal–insulator transition (MIT). The temperature exponent of the estimated phase coherence time τ φ is around unity.