Premium
Excitonic Gain in Coherently‐Driven Semiconductors
Author(s) -
Likforman J.P.,
Hulin D.,
Joffre M.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199803)206:1<71::aid-pssb71>3.0.co;2-n
Subject(s) - femtosecond , excited state , semiconductor , raman spectroscopy , transparency (behavior) , optoelectronics , exciton , laser , electromagnetically induced transparency , physics , materials science , atomic physics , optics , condensed matter physics , computer science , computer security
Abstract We report the observation of optical gain in the transparency region of GaAs highly excited by femtosecond pulses just below the excitonic resonance. We discuss the origin of the observed signal and attribute it to hyper‐Raman type gain.