Premium
Disorder‐Induced Dephasing of Excitons in Semiconductor Heterostructures
Author(s) -
Brinkmann D.,
Bott K.,
Koch S. W.,
Thomas P.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199803)206:1<493::aid-pssb493>3.0.co;2-d
Subject(s) - dephasing , degenerate energy levels , exciton , heterojunction , semiconductor , coulomb , condensed matter physics , excited state , polarization (electrochemistry) , physics , quantum mechanics , chemistry , electron
A theoretical study of the influence of static disorder on the dephasing of the optical polarization in semiconductor heterostructures is presented. Coulomb interaction effects between the excited carriers are treated at the Hartree‐Fock level. For the example of degenerate‐four‐wave‐mixing configuration the parameter range is analyzed for which one can expect disorder induced dephasing.