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Microscopic Theory for the Optical Properties of Coulomb‐Correlated Semiconductors
Author(s) -
Pereira M. F.,
Henneberger K.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199803)206:1<477::aid-pssb477>3.0.co;2-5
Subject(s) - photoluminescence , coulomb , physics , excited state , spectroscopy , microscopic theory , photon , semiconductor , photoluminescence excitation , electron , excitation , atomic physics , condensed matter physics , absorption (acoustics) , quantum mechanics , optoelectronics , optics
A nonequilibrium Green's functions approach is presented for the consistent computation of semiconductor quantum well optical spectra including strong Coulomb correlations within the coupled photon and carrier system. Bethe‐Salpeter‐like equations are given for the optical response and recombination rates in the excited medium. Band structure, quantum confinement, many‐body and cavity resonator effects are included in the microscopic approach. The theory is applied to the description of absorption/gain, luminescence, single and two‐beam photoluminescence excitation spectroscopy for arbitrary temperatures and carrier densities. Numerical results, showing good agreement with recent experiments are presented for III–V and II–VI materials, from the linear regime, characterized by excitonic effects to the high density case in which a strongly interacting electron–hole plasma is proposed as the dominant mechanism.