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Emission and Lasing of a Semiconductor within Rectangular Waveguide Geometry
Author(s) -
Peng Q. Y.,
Manzke G.,
Henneberger K.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199803)206:1<419::aid-pssb419>3.0.co;2-l
Subject(s) - lasing threshold , semiconductor , waveguide , geometry , optics , materials science , optoelectronics , physics , laser , mathematics
Emission spectra of a semiconductor stationarily excited and embedded in a rectangular waveguide are presented. A recently developed quantum kinetic description is used to obtain exact relations between the output power and optical functions of the semiconductor. The latter ones are provided by solving the semiconductor Bloch equations (SBE) on an advanced level, i.e. considering dynamical screening and both carrier–carrier and carrier–polarization scattering. Gain and related output spectra for various excitation intensities are presented and compared with different approximations used in the literature. The strong influence of the transverse mode propagation on the laser output is demonstrated.