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Damping and T‐Matrix in Dense e–h Plasmas
Author(s) -
Schepe R.,
Schmielau T.,
Tamme D.,
Henneberger K.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199803)206:1<273::aid-pssb273>3.0.co;2-t
Subject(s) - physics , scattering , plasma , matrix (chemical analysis) , function (biology) , transverse plane , polarization (electrochemistry) , quantum mechanics , stochastic matrix , semiconductor , condensed matter physics , quantum electrodynamics , computational physics , mathematical physics , mathematics , materials science , chemistry , statistics , structural engineering , evolutionary biology , markov chain , engineering , composite material , biology
An incoherent approach to the physical mechanisms giving rise to the Mott transition and gain in III–V and II–VI semiconductor media is presented. Dynamical screening and one‐particle Green's functions (GF) are handled within a full RPA scheme. The resulting one‐particle GF serve as input for a T ‐matrix calculation in screened ladder approximation taking into account bound and scattering states on an equal footing. The T ‐matrix is used to improve the one‐particle GF as well as the transverse polarization function.