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Coherently Driven Plasmons in a Laser‐Excited Semiconductor
Author(s) -
Moldzio U.,
Manzke G.,
Henneberger K.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199803)206:1<265::aid-pssb265>3.0.co;2-p
Subject(s) - plasmon , excited state , laser , semiconductor , physics , formalism (music) , random phase approximation , semiconductor laser theory , condensed matter physics , optoelectronics , optics , atomic physics , art , musical , visual arts
We present a numerical study of the two‐band semiconductor Bloch equations in bulk GaAs under the influence of a short laser pulse. In our microscopic approach, based on the non‐equilibrium Greens function (GF) formalism, we show that within the random‐phase approximation with a dynamically screened potential the coherent carrier dynamics is strongly modified by a coupling of optical plasmons and interband polarisation.