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Strong Correlation (T‐Matrix) Effects in Electron–Hole Plasmas in Semiconductors
Author(s) -
Gericke D. O.,
Kosse S.,
Schlanges M.,
Bonitz M.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199803)206:1<257::aid-pssb257>3.0.co;2-l
Subject(s) - scattering , dephasing , condensed matter physics , physics , electron , born approximation , matrix (chemical analysis) , electron scattering , scattering rate , carrier scattering , semiconductor , plasma , kinetic energy , quantum mechanics , chemistry , chromatography
The influence of strong coupling effects on the carrier–carrier scattering and dephasing rates in bulk semiconductors is investigated. We derive explicit expressions for the equilibrium and nonequilibrium scattering rates using a quantum kinetic approach in the T ‐matrix (full ladder) approximation. Numerical results are given, as example, for bulk GaAs in equilibrium using the T ‐matrix approach and, for a comparison, the Born approximation. Our results show the evidence for the influence of strong correlations. A reduction of the scattering rates by up to 30% compared to the Born result and the influence of resonances on the scattering cross sections are observed. The influence of strong correlations is shown to increase with decreasing temperature.