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Doppler‐Shifted Self‐Reflection from a Semiconductor
Author(s) -
Schülzgen A.,
Peyghambarian N.,
Hughes S.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199803)206:1<125::aid-pssb125>3.0.co;2-8
Subject(s) - reflection (computer programming) , semiconductor , doppler effect , optics , femtosecond , dielectric , total internal reflection , pulse (music) , materials science , physics , optoelectronics , laser , quantum mechanics , detector , computer science , programming language
We report the experimental observation of a self‐reflected wave inside a dense saturable absorber. A femtosecond pulse saturates the absorption and causes a density front to penetrate into the semiconductor. The dielectric constant change across the boundary between areas of low and high densities results in internal reflection. Due to the front propagation the self‐reflected light is shifted by the Doppler effect. The Doppler shift makes it possible to distinguish between surface reflection and self‐reflection and is used to experimentally verify the dynamic nonlinear skin effect. The measurements are in agreement with our theory which is within the framework of the reduced semiconductor Maxwell‐Bloch equations.