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Stimulated Raman Scattering of an Hybrid Pump Wave Propagating Obliquely in a Magnetoactive Centrosymmetric Semiconductor Plasma
Author(s) -
Dubey Swati,
Ghosh S.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199802)205:2<657::aid-pssb657>3.0.co;2-6
Subject(s) - raman scattering , raman spectroscopy , semiconductor , optics , wavelength , plasma , x ray raman scattering , scattering , atomic physics , materials science , physics , optoelectronics , quantum mechanics
Considering the hydrodynamic model of a semiconductor plasma, stimulated Raman scattering (SRS) of an hybrid pump wave propagating obliquely with the externally applied magnetic field in a centrosymmetric doped semiconductor plasma has been analytically investigated. The origin of SRS lies in the third‐order nonlinear optical susceptibility arising due to the electron density perturbations and the molecular vibrations of the medium. The magnitude of third‐order Raman susceptibility determined from the present analysis agrees well with the experimentally observed and theoretically quoted values. The steady‐state Raman gain constant has been identified. The magnetic field is found to augment the gain constant. The gain constant increases with scattering angle and is maximum for the backscattered mode. Transmitted intensity of the scattered mode and Raman cell efficiency have also been deduced when the cell length is quite large compared to the pump wavelength. The cell efficiency is found to be maximum for the backscattered mode. The analysis established the possibility of optical phase conjugation in semiconductor plasma and the minimum cell length required for OPC to occur is found to be 60 μm.