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Vacancy Equilibrium Concentration on (111), (100) and (110) Planes of Silicon Crystal Surface in Gibbs Adsorption Model
Author(s) -
Bakovets V. V.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199802)205:2<507::aid-pssb507>3.0.co;2-u
Subject(s) - adsorption , vacancy defect , gibbs isotherm , crystal (programming language) , surface tension , plane (geometry) , crystallography , surface (topology) , silicon , materials science , thermodynamics , gibbs free energy , chemistry , geometry , physics , metallurgy , mathematics , computer science , programming language
The use of Gibbs' adsorption model and dependence of the surface tension of crystal planes on the number of surface atoms has allowed to obtain the ratio of the surface tension of the monocrystal plane to the concentration of vacancies in the volume of the crystal. For typical equilibrium concentration of monovacancies in the crystal, grown by the Czochralski method, the relative excess adsorption of vacancies on surfaces (111), (100) and (110) is equal to 7×10 7 , 11×10 7 and 8×10 7 cm —2 , respectively.