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Charge Redistribution in Non‐Ohmic Hopping Conduction in Disordered Materials
Author(s) -
Emin D.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<69::aid-pssb69>3.0.co;2-h
Subject(s) - redistribution (election) , resistor , condensed matter physics , thermal conduction , ohmic contact , formalism (music) , charge carrier , materials science , charge density , physics , voltage , nanotechnology , thermodynamics , quantum mechanics , art , musical , politics , political science , law , visual arts , layer (electronics)
The spatial distribution of charge in a disordered medium is generally altered as steady‐state flow is driven by progressively higher electric fields. Here a formalism to determine how the average site occupancies are altered by steady‐state flow is described. An example is presented to illustrate when and how this charge redistribution differs from that obtained by replacing the hopping system by a set of unequal resistors. The current carried by a low‐density of charge carriers executing nearest‐neighbor hopping along a disordered chain is calculated without restricting the charge redistribution to that determined with the resistor‐network approximation.