Premium
Anomalies in Tunneling through Localized States
Author(s) -
Vaknin A.,
Ovadyahu Z.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<413::aid-pssb413>3.0.co;2-b
Subject(s) - condensed matter physics , quantum tunnelling , superconductivity , insulator (electricity) , band gap , materials science , physics , optoelectronics
We study the I – V characteristics of normal‐metal/insulator/superconductor (NIS) and superconductor/insulator/superconductor (SIS) junctions with InO x as the insulator. The characteristics of both types of devices exhibit structure at sub‐gap as well as above‐gap biases. The voltage position of the above‐gap structure seems to scale with the gap energy. SIS junctions exhibit only part of the above‐gap structure. These effects are associated with the presence of localized states in the barrier region.