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Conduction Mechanism in RuO 2 ‐Based Thick Films
Author(s) -
Flachbart K.,
Pavlík V.,
Tomašovičová N.,
Adkins C. J.,
Somora M.,
Leib J.,
Eska G.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<399::aid-pssb399>3.0.co;2-x
Subject(s) - quantum tunnelling , thermal conduction , condensed matter physics , variable range hopping , materials science , charge carrier , electrical resistivity and conductivity , electrical conductor , electron , resistor , conductivity , mechanism (biology) , impurity , atmospheric temperature range , composite material , voltage , electrical engineering , chemistry , physics , thermodynamics , engineering , quantum mechanics , organic chemistry
The paper presents resistivity characteristics of RuO 2 ‐based thick resistive films (temperature and magnetic field dependences), and analyzes them from the point of view of the possible conduction mechanism at low temperatures. It is shown that simple models based on tunnelling of charge carriers between conductive RuO 2 grains and on variable range hopping of carriers between localized impurity states in the glass matrix via thermal activation do not provide a satisfactory explanation for the electrical conductivity of the investigated thick film resistors. We suggest a new mechanism based on tunnelling of electrons through graded barriers between conductive particles which might explain the observed behaviour.