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Non‐Equilibrium Transport in Anderson Insulators
Author(s) -
Vaknin A.,
Ovadyahu Z.,
Pollak M.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<395::aid-pssb395>3.0.co;2-c
Subject(s) - conductance , maxima and minima , condensed matter physics , relaxation (psychology) , gate voltage , materials science , mosfet , voltage , insulator (electricity) , physics , optoelectronics , transistor , quantum mechanics , psychology , mathematical analysis , social psychology , mathematics
Abstract We report observations of glass behavior of an electronic system in an Anderson insulator. The system used is a MOSFET‐like structure with a thin film of In 2 O 3— x serving as the active element. The glassy behavior is reflected as a local minimum at the ‘cool‐down’ gate voltage in the conductance vs. gate‐voltage, G ( V g ) sweeps. Relaxation is monitored as a function of temperature and film disorder. Studying certain features of the G ( V g ) minima reveals that interactions are important in the relaxation process.