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Thermopower of Neutron Transmutation‐Doped Ge:Ga in the Hopping Region
Author(s) -
Andreev A. G.,
Zabrodskii A. G.,
Egorov S. V.,
Zvyagin I. P.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<381::aid-pssb381>3.0.co;2-w
Subject(s) - seebeck coefficient , variable range hopping , condensed matter physics , phonon drag , doping , materials science , nuclear transmutation , impurity , atmospheric temperature range , semiconductor , thermal conduction , valence (chemistry) , neutron , physics , thermal conductivity , optoelectronics , thermodynamics , nuclear physics , quantum mechanics , composite material
The low temperature thermopower of moderately compensated semiconductor neutron transmutation‐doped p‐Ge:Ga had been under investigation in the range 50 to 1.4 K. For the valence band conduction ( T ≤ 10 K) it shows the important role of the phonon drag effect, which is suppressed for the hopping transport via Ga impurity band ( T ≤ 10 K). It has been shown that there is an additional carrier transport channel contributing to the thermopower in the transition range. At temperatures below 2 K where variable range hopping takes place the thermopower vanishes. Two alternative explanation of this effect are discussed.