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The Scaling Behaviour of the Metal–Insulator Transition of Isotopically Engineered Neutron‐Transmutation Doped Germanium
Author(s) -
Rentzsch R.,
Ionov A. N.,
Reich Ch.,
Müller M.,
Sandow B.,
Fozooni P.,
Lea M. J.,
Ginodman V.,
Shlimak I.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<269::aid-pssb269>3.0.co;2-c
Subject(s) - dielectric , doping , scaling , germanium , nuclear transmutation , materials science , condensed matter physics , neutron , metal–insulator transition , metal , optoelectronics , physics , nuclear physics , metallurgy , silicon , geometry , mathematics
We measured on the dielectric side, with | N / N c — 1| ≤ 0.64 the critical indices of the metal–insulator transition (MIT) in n‐Ge with low (1.4 and 12%) and medium (38 and 54%) compensation, prepared by neutron‐transmutation doping (NTD) of isotopic mixtures of 74 Ge and 70 Ge. We analyzed from the temperature dependence of hopping resistance in the variable‐range hopping (VRH) regime with Coulomb gap the scaling of the localization length a , and of the dielectric constant ϰ. At low compensation we find that the critical indices are ν ≈ 1/2, ζ ≈ 1, which increase up to ν ≈ 1, ζ ≈ 2, for medium compensations.