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The Quantum Corrections to the Conductivity for Homogeneously Doped Barely Metallic Germanium
Author(s) -
Ionov A. N.,
Rentzsch R.,
Fozooni P.,
Lea M. J.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<257::aid-pssb257>3.0.co;2-o
Subject(s) - germanium , condensed matter physics , doping , conductivity , scattering , electrical resistivity and conductivity , materials science , impurity , metal , weak localization , physics , optics , magnetoresistance , magnetic field , quantum mechanics , silicon , metallurgy
We report the results of electrical conductivity studies down to 30 mK for barely metallic samples in the vicinity of the metal–insulator transition (MIT). We used isotopically enriched 74 Ge crystals and neutron‐transmutation doping to produce homogeneously doped n‐type germanium with As donors and with compensation degree of about 12%. We found that the temperature dependence of the conductivity obeys a logarithmic‐like behavior within the experimental range of temperatures. This implies the existence of another mechanism for the scattering apart from the electron–electron interaction. According to the theory of Fukuyama the ln ( T ) dependence should be due to some kind of magnetic scattering. Therefore, it is impossible to obtain the scaling behavior of the conductivity at zero temperature as a function of the impurity concentration in the vicinity of the MIT due to the divergence of ln ( T ) at T → 0.