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Negative Hopping Magnetoresistance near the Crossover to Diffusive Transport in Poly‐Si Thin Film Transistor
Author(s) -
Ishida S.,
Oto K.,
Takaoka S.,
Murase K.,
Shirai S.,
Serikawa T.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<161::aid-pssb161>3.0.co;2-b
Subject(s) - variable range hopping , condensed matter physics , magnetoresistance , crossover , transistor , thin film transistor , magnetic field , materials science , field effect transistor , weak localization , voltage , thermal conduction , physics , nanotechnology , quantum mechanics , artificial intelligence , layer (electronics) , computer science , composite material
Negative magnetoresistance (MR) due to orbital motion in the two‐dimensional variable‐range hopping (2D‐VRH) has been studied near the crossover to diffusive regime on n ‐channel poly‐Si thin film transistors (TFTs) with varying gate voltage. Dependences of the observed negative MR on temperature and magnetic field agree, in the particular regime of Efros‐Shklovskii VRH, with the theoretical predictions based on the quantum interference in VRH as ∼ T —3/2 B 2 in low magnetic fields and as ∼ T —3/4 B in moderate fields, even when the localization length ξ is larger than the hopping length R h ( R h ≳ 0.4ξ).