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Studies of Magnetoresistance and Hall Effect in Insulating Fe/SiO 2 Granular Films
Author(s) -
Aronzon B. A.,
Aronzon B. A.,
Likalter A. A.,
Rylkov V. V.,
Rylkov V. V.,
Sarychev A. K.,
Sedova M. A.,
Varfolomeev A. E.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<151::aid-pssb151>3.0.co;2-f
Subject(s) - magnetoresistance , condensed matter physics , hall effect , electrical resistivity and conductivity , percolation (cognitive psychology) , percolation threshold , metal–insulator transition , materials science , giant magnetoresistance , cluster (spacecraft) , insulator (electricity) , granular material , colossal magnetoresistance , conductivity , physics , composite material , magnetic field , quantum mechanics , neuroscience , computer science , biology , programming language
The Hall effect and magnetoresistance in Fe/SiO 2 granular metals have been studied below the metal–insulator transition in the regime of hopping conductivity. The Hall resistivity rises with decreasing Fe fraction and its value is much higher than that expected. The magnetoresistance is negative in close vicinity of the transition point and is positive far away from it. The even voltage between Hall probes reflects the reconstruction of percolation cluster showing the absence of self‐averaging.