Premium
On the Transport Properties of Microcrystalline Silicon at Low Temperatures
Author(s) -
Zhou J.H.,
Baranovskii S. D.,
Yamasaki S.,
Ikuta K.,
Tanaka K.,
Kondo M.,
Matsuda A.,
Thomas P.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<147::aid-pssb147>3.0.co;2-w
Subject(s) - microcrystalline silicon , microcrystalline , silicon , materials science , chemical engineering , chemistry , optoelectronics , crystallography , crystalline silicon , engineering , amorphous silicon
The dark and photoconductivity have been measured over a wide temperature range with a high crystallinity hydrogenated microcrystalline silicon (μc‐Si:H) sample. It is the first time that photoconductivity over such a broad temperature range (down to 20 K) has been reported. Striking similarities in the temperature dependences of the dark and photoconductivity between μc‐Si:H and some well studied materials, such as hydrogenated amorphous silicon, suggest that at low temperatures hopping of carriers between localized states dominates the transport properties of μc‐Si:H.