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Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs
Author(s) -
Katsumoto S.,
Oiwa A.,
Iye Y.,
Ohno H.,
Matsukura F.,
Shen A.,
Sugawara Y.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<115::aid-pssb115>3.0.co;2-f
Subject(s) - condensed matter physics , variable range hopping , anisotropy , reentrancy , metal–insulator transition , thermal conduction , electrical resistivity and conductivity , resistive touchscreen , materials science , magnetic field , coulomb , insulator (electricity) , metal , electron , physics , electrical engineering , optoelectronics , engineering , quantum mechanics , metallurgy , composite material
We report magnetotransport of (Ga, Mn)As below 1 K in the reentrant insulating phase. The external magnetic field drove the samples from the strongly insulating regime to the variable range hopping one. Below 1 K, the resistivity was strongly anisotropic (by about two orders of magnitude). The conduction along the highly resistive direction ([11‐0]) was well described by variable range hopping in the soft Coulomb gap regime while that along the lower resistive direction ([110]) seemed to undergo an insulator‐to‐metal transition by the external magnetic field. The result may be a key to solve the problem of reentrant metal‐to‐insulator transition in (Ga, Mn)As with increasing Mn content.