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The Investigation of the High‐Frequency Hopping Conductivity in Two‐ and Three‐Dimensional Electron Gas by an Acoustic Method
Author(s) -
Drichko I. L.,
Diakonov A. M.,
Smirnov I. Yu.,
Suslov A. V.
Publication year - 1998
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/(sici)1521-3951(199801)205:1<111::aid-pssb111>3.0.co;2-v
Subject(s) - conductivity , condensed matter physics , electron , landau quantization , fermi gas , heterojunction , quantum hall effect , materials science , impurity , physics , quantum mechanics
High‐frequency (HF) conductivity (σ hf ) measured by an acoustical method has been studied in GaAs/AlGaAs heterostructures in a linear and nonlinear regime on acoustic power. It has been shown that in the quantum Hall regime at magnetic fields corresponding to the middle of the Hall plateaus the HF conductivity is determined by the sum of the conductivity of two‐dimensional electrons in the high‐mobility channel and the hopping conductivity of the electrons in the doped thick AlGaAs layer. The dependence of these conductivities on temperature is analyzed. The width of the Landau level broadened by the impurity random potential is determined.