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Conductivity of heavily doped Si:P under uniaxial stress
Author(s) -
Waffenschmidt S.,
v. Löhneysen H.
Publication year - 2000
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/(sici)1521-3889(200002)9:2<75::aid-andp75>3.0.co;2-i
Subject(s) - materials science , monochromator , spectral line , light emission , quantum tunnelling , excited state , doping , photon energy , substrate (aquarium) , atomic physics , biasing , conductivity , emission spectrum , dielectric , photon , molecular physics , voltage , optoelectronics , optics , physics , quantum mechanics , wavelength , oceanography , astronomy , geology
Barely insulating, uncompensated Si:P samples have been tuned through the metal‐insulator transition applying uniaxial stress along the [100] direction. We find a critical exponent μ ≈ 1 of the electrical conductivity extrapolated to temperature T = 0, i.e. σ( T → 0, S ) ∼ | S — S c | μ , in disagreement with earlier stress tuning studies along [123‐] where μ ≈ 0.5 was reported. Varying the stress or the concentration leads to a different T dependence of σ( T ). Our stress‐tuning measurements obey finite‐ T scaling with a dynamic exponent z = 3.
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