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Insulating state in open quantum dots and quantum dot arrays
Author(s) -
Ge F.,
Prasad C.,
Andresen A.,
Bird J.P.,
Ferry D.K.,
Lin L.H.,
Aoki N.,
Nakao K.,
Ochiai Y.,
Ishibashi K.,
Aoyagi Y.,
Sugano T.
Publication year - 2000
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/(sici)1521-3889(200001)9:1<65::aid-andp65>3.0.co;2-m
Subject(s) - quantum dot , state (computer science) , physics , quantum point contact , quantum mechanics , condensed matter physics , materials science , computer science , quantum well , laser , algorithm
We describe the observation of novel localization in mesoscopic quantum dots and quantum dot arrays, which are realized in high mobility GaAs/AlGaAs heterojunctions using the split‐gate technique. With a sufficient gate voltage applied to form the devices, their resistance diverges as the temperature is lowered below a degree Kelvin, behavior which we attribute to localization. Evidence for the localization is found over the entire range of gate voltage for which the dots are defined, persisting to conductances higher than 50 e 2 / h .