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Coulomb blockade and transport spectroscopy in short Si:MOSFET
Author(s) -
Sanquer M.,
Specht M.,
Ghenim L.,
Deleonibus S.,
Guegan G.
Publication year - 1999
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/(sici)1521-3889(199911)8:7/9<743::aid-andp743>3.0.co;2-r
Subject(s) - coulomb blockade , condensed matter physics , physics , conductance , quantum dot , coulomb , electron , excited state , mosfet , spectroscopy , atomic physics , voltage , transistor , quantum mechanics
We report Coulomb oscillations in short (50 nm and 100 nm) and wide Silicon MOSFETs at very low temperature, when the source‐drain conductance is below the quantum e 2 / h . the geometry is dual of a wire, where such oscillations have been previously reported. Our observations show that the dominating best conducting channel is a localized state which can accomodate several electrons. This emphasizes that Coulomb blockade appears also at low temperature in a standart short and wide transistor‐like geometry, without intentional confinement, as far as the conductance is below the quantum. Analysis of the non‐linear transport permits to evaluate both the mean one electron spacing (few kelvins) and the Coulomb energy (few tens of kelvins). At finite transport voltage the contributions of excited states are observed. Comparing the 50 nm and 100 nm series, we find that the size of the impurity quantum dot roughly scales with the source‐drain distance.