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The quantized Hall insulator
Author(s) -
Hilke M.,
Shahar D.,
Song S.H.,
Tsui D.C.,
Shayegan M.,
Xie Y.H.
Publication year - 1999
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/(sici)1521-3889(199911)8:7/9<603::aid-andp603>3.0.co;2-a
Subject(s) - quantum hall effect , condensed matter physics , quantization (signal processing) , fractional quantum hall effect , quantum spin hall effect , physics , insulator (electricity) , diagonal , composite fermion , magnetic field , thermal hall effect , hall effect , quantum mechanics , mathematics , optoelectronics , geometry , algorithm
The quantized Hall insulator is characterized by vanishing conductivities and a quantized Hall resistance. For low mobility samples, the quantized Hall insulator is obtained when the magnetic field is increased well above the ν = 1 quantum Hall state. For higher mobility samples, a similar quantization is observed when the magnetic field is increased above the ν = 1/3 fractional quantum Hall states. This quantization, throughout the quantum Hall liquid‐to‐insulator transition, leads to a perfect semicircle relation for the diagonal and Hall conductivities. The measurements were performed in Ge/SiGe quantum Wells and in n‐type InP/InGaAs and GaAs/AlGaAs heterostuctures.