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Low‐temperature dephasing in disordered conductors: experimental aspects
Author(s) -
Gershenson M.E.
Publication year - 1999
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/(sici)1521-3889(199911)8:7/9<559::aid-andp559>3.0.co;2-7
Subject(s) - dephasing , condensed matter physics , electrical conductor , crossover , saturation (graph theory) , electron , physics , quantum mechanics , computer science , mathematics , combinatorics , artificial intelligence
What is the lowest temperature to which one can trace the growth of the dephasing time τ φ in low‐dimensional conductors? I consider the fundamental limitation, the crossover from weak to strong localization, as well as several experimental reasons for frequently observed saturation of τ φ (hot‐electron effects, dephasing by external noise). Recent progress in our understanding of the electron‐phonon interaction in disordered conductors is also briefly discussed.