Premium
Preparation of sputtered SrAl 2 O 4 :Eu films and their thermoluminescence properties
Author(s) -
Tsutai Itaru,
Kamimura Takuya,
Kato Keizo,
Kaneko Futao,
Shinbo Kazunari,
Ohta Masatoshi,
Kawakami Takahiro
Publication year - 2000
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/(sici)1520-6416(20000715)132:1<7::aid-eej2>3.0.co;2-3
Subject(s) - thermoluminescence , materials science , engineering physics , optoelectronics , luminescence , engineering
SrAl 2 O 4 activated with Eu, a new fluorescent material having a long decay time, was deposited on Si substrates using an RF sputtering technique with facing targets. The as‐deposited films did not show any peaks in the X‐ray diffraction spectra and no photoluminescence was observed. However, X‐ray diffraction peaks and a photoluminescent peak at about 520 nm were observed after annealing in a reducing Ar+H 2 gas and an inert Ar gas. The structure of the sputtered films was investigated using EDS and SEM. The thermoluminescence peaks were observed, and the lifetime of the fluorescence and the activation energies were calculated from the peaks. The results in this work are useful for future applications. © 2000 Scripta Technica, Electr Eng Jpn, 132(1): 7–14, 2000