Premium
Analysis and reduction of radiated EMI noise from converter systems
Author(s) -
Igarashi Seiki,
Takizawa Satoki,
Kuroki Kazuo,
Shimizu Toshihisa
Publication year - 2000
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/(sici)1520-6416(200001)130:1<106::aid-eej13>3.0.co;2-3
Subject(s) - emi , snubber , electromagnetic interference , insulated gate bipolar transistor , noise (video) , electrical engineering , waveform , equivalent circuit , electronic engineering , electromagnetic compatibility , output impedance , engineering , voltage , acoustics , physics , computer science , capacitor , artificial intelligence , image (mathematics)
It is well known that high dv/dt rates on switching devices are the source of EMI noise. This paper describes a mechanism and reduction methods of radiated EMI noise on IGBTs. The radiated EMI noise is generated by oscillating current flowing through the IGBT's output capacity and the snubber circuit, which we call equivalent circuit of radiated EMI noise. The oscillating current of the equivalent circuit is forced to flow by high dv/dt rates of IGBT switching operation. Radiated EMI noise can be analyzed by frequency evolution of oscillating current. The results of this analysis show the relationship of high‐frequency impedance of the equivalent circuit to radiated EMI noise, as well as the behavior of the IGBT's switching voltage waveform. In addition, it is indicated that using a di/dt control gate drive circuit is effective as a means for reducing radiated EMI noise. It is clarified that the standard for industrial equipment of CISPR can be satisfied by using the proposed gate drive circuit. The effects of the method have been verified by experimental and simulational results. © 1999 Scripta Technica, Electr Eng Jpn, 130(1): 106–117, 2000