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Preparation and characterization of SrBi 2 Ta 2 O 9 thin films by low‐oxygen‐concentration annealing technique
Author(s) -
Suzuki Takaaki,
Nabatame Toshihide,
Higashiyama Kazutoshi
Publication year - 1999
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/(sici)1520-6416(199912)129:4<1::aid-eej1>3.0.co;2-0
Subject(s) - materials science , annealing (glass) , thin film , oxygen , fluorite , analytical chemistry (journal) , ferroelectricity , polarization (electrochemistry) , mineralogy , composite material , optoelectronics , nanotechnology , dielectric , metallurgy , chemistry , chromatography , organic chemistry
SrBi 2 Ta 2 O 9 thin films were successfully prepared at a low annealing temperature using a low‐oxygen‐concentration annealing technique. It was possible to obtain a single perovskite phase at 600 °C in 0.7% oxygen concentration and fluorite phase was observed at 600 °C in 100% oxygen. In addition, the SrBi 2 Ta 2 O 9 thin films annealed at 650 °C in 0.7% oxygen were well crystallized and composed of dense crystal grains with a size of 70 nm. The remanent polarization and leakage current density of the SrBi 2 Ta 2 O 9 thin film obtained using this new technique were 7 μC/cm 2 and 3 × 10 −9 A/cm 2 (at 5 V), respectively. The final remanent polarization after 10 9 switching cycles was nearly constant. © 1999 Scripta Technica, Electr Eng Jpn, 129(4): 1–6, 1999