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Discussion of thyristor characteristic optimization for HVDC valves
Author(s) -
Tanabe Shigeru,
Kobayashi Sumio
Publication year - 1999
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/(sici)1520-6416(199908)128:3<43::aid-eej6>3.0.co;2-k
Subject(s) - thyristor , integrated gate commutated thyristor , reliability (semiconductor) , voltage , electrical engineering , static induction thyristor , mos controlled thyristor , power transmission , power (physics) , power loss , gate turn off thyristor , hvdc converter , thyristor drive , engineering , electronic engineering , physics , transistor , quantum mechanics , transformer , gate oxide
We have been developing thyristor valves for high‐voltage dc transmission systems for more than 20 years. During this period, the size, power loss, and reliability have been dramatically improved and one of the technical advances which support the improvements is to increase the voltage and current rating of thyristors. However, when thyristor voltage rating exceeds 6 kV, increasing the voltage rating does not lead to size and power loss reduction of the valve because of turn‐off characteristic deteriorations. This paper describes a method which can optimize the thyristor characteristics in such a way that the size and power loss of valves are minimized. Two different approaches for HVDC and back‐to‐back systems are presented. © 1999 Scripta Technica, Electr Eng Jpn, 128(3): 43–52, 1999