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Formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO 2
Author(s) -
Nishikawa Hiroyuki,
Watanabe Eiki,
Ito Daisuke,
Ohki Yoshimichi
Publication year - 1997
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/(sici)1520-6416(19971130)121:3<9::aid-eej2>3.0.co;2-8
Subject(s) - paramagnetism , excimer , materials science , amorphous solid , laser , excimer laser , irradiation , optics , crystallography , chemistry , condensed matter physics , physics , nuclear physics
The formation mechanisms of paramagnetic defect centers in amorphous SiO 2 induced by excimer lasers, 60 Co γ rays, and mechanical fracturing were investigated. Correlation between the paramagnetic defect centers and their precursors introduced during manufacture is discussed for the cases of excimer lasers and γ rays. For the case of mechanical fracturing, formation of strained Si·O·Si bonds as well as paramagnetic defects is examined. The mechanism of laser‐ or γ‐ray‐induced paramagnetic defect centers is compared with that of fracture‐induced centers. © 1998 Scripta Technica, Inc. Electr Erg Jpn, 121(3): 9–19, 1997