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Fabrication and properties of one‐mask‐patterned ferroelectric integrated capacitors
Author(s) -
Torii Kazuyoshi,
Shoji Kenichi,
Kawakami Hiroshi,
Kumihashi Takao,
Itoga Toshihiko,
Yokoyama Natsuki,
Moniwa Masahiro,
Kaga Tooru,
Fujisaki Yoshihisa
Publication year - 1997
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/(sici)1520-6416(199710)121:1<43::aid-eej6>3.0.co;2-#
Subject(s) - fabrication , capacitor , ferroelectricity , materials science , ferroelectric capacitor , optoelectronics , engineering physics , electrical engineering , nanotechnology , engineering , voltage , dielectric , medicine , alternative medicine , pathology
A one‐mask‐patterned ferroelectric capacitor test structure designed with a 0.5‐μm feature size was fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as that of as‐deposited film. These one‐mask‐patterned ferroelectric capacitors, with switching charge almost equal to as‐deposited film, were successfully fabricated. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology. However, the leakage current density for micron‐sized capacitors is 2 to 10 times that of large capacitors. The leakage current in small capacitors is increased due to perimeter leakage that runs through the damaged region on the capacitor sidewall. © Scripta Technica, Inc. Electr Eng Jpn, 121(1): 43–50, 1997