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Evaluation of microscopic structural randomness in SiO 2 by analysis of photoluminescence decay profiles
Author(s) -
Ishii Keisuke,
Seol Kwang Soo,
Ohki Yoshimichi,
Nishikawa Hiroyuki
Publication year - 1997
Publication title -
electrical engineering in japan
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.136
H-Index - 28
eISSN - 1520-6416
pISSN - 0424-7760
DOI - 10.1002/(sici)1520-6416(199705)119:3<1::aid-eej1>3.0.co;2-d
Subject(s) - photoluminescence , randomness , materials science , exponential decay , analytical chemistry (journal) , chemical vapor deposition , stretched exponential function , oxide , oxygen , exponential function , optoelectronics , chemistry , metallurgy , physics , mathematical analysis , statistics , mathematics , organic chemistry , chromatography , nuclear physics
Microscopic structural randomness in SiO 2 , a typical electrical insulating material, was evaluated by observing the decay profile of the photoluminescence due to oxygen vacancies (≡Si‐Si≡). As samples with different degrees of randomness, an ion‐implanted thermal SiO 2 film, SiO 2 films formed by plasma‐enhanced chemical vapor deposition of tetraethoxysilane with and without doped fluorine, a buried oxide film prepared by SIMOX (separation by ion‐implanted oxygen), and a bulk silica glass prepared by the soot‐remelting method were tested. By analyzing the decay profile with a stretched exponential function, it was found that the deviation of the decay profile from a single exponential function is larger in the samples whose infrared absorption properties and HF etch rate suggest greater structural randomness. © 1997 Scripta Technica, Inc. Electr Eng Jpn, 119 (3): 1–6, 1997