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Matching implant doses using design of experiments
Author(s) -
Czitrom Veronica,
Casado De Amezua Ayala Jesus,
Ros Sanchez Antonio
Publication year - 1998
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/(sici)1099-1638(199807/08)14:4<211::aid-qre191>3.0.co;2-z
Subject(s) - wafer , ion implantation , line (geometry) , matching (statistics) , calibration , transistor , electronic engineering , computer science , process (computing) , integrated circuit , voltage , engineering , reliability engineering , electrical engineering , mathematics , chemistry , statistics , ion , geometry , operating system , organic chemistry
A designed experiment was performed to match the arsenic implant dose of two implanters during integrated circuit manufacture. Implanter dose mismatch is usually the largest contributor to variability in an important electrical parameter of an integrated circuit, the p‐channel transistor threshold voltage pVth. Matching the implanters and other corrective actions dramatically improved the Cpk value for pVth by 1.6. Analysis of the results also indicated that one implanter produced a spatial pattern on the wafers. A relationship was established between equipment calibration, in‐line control measurements and end‐of‐the‐line electrical results. This relationship provides a method to derive process specifications for in‐line process control based on end‐of‐the‐line product specifications on electrical parameters. The data are analysed graphically, which provides a powerful and intuitive understanding of the results. Design of experiment (DOE) techniques have proven to be a very valuable tool for implant matching and are now included as part of the implanter matching methodology. The methodology to match implanters and to relate end‐of‐the‐line product specifications to in‐line processing specifications can be generalized and applied to other types of processes. © 1998 John Wiley & Sons, Ltd.