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Electrical characterization and reliability evaluation of capacitors by means of in situ leakage current measurements
Author(s) -
Manca J. V.,
Croes K.,
de Schepper L.,
de Ceuninck W.,
Stals L. M.,
Jacques L.,
Tielemans L.,
Gerrits N.,
Hoppener R.
Publication year - 1998
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/(sici)1099-1638(199803/04)14:2<63::aid-qre160>3.0.co;2-p
Subject(s) - capacitor , reliability engineering , reliability (semiconductor) , characterization (materials science) , materials science , leakage (economics) , in situ , electronic engineering , electrical engineering , engineering , voltage , thermodynamics , physics , economics , power (physics) , nanotechnology , macroeconomics , meteorology
The in situ leakage current measurement technique is presented for the high‐resolution observation of the electrical behaviour of dielectric material systems, e.g. capacitors, at high temperatures. This technique is useful for the electrical characterization of dielectrics during linear heating experiments and/or isothermal steps. Applied to a population of test structures, the in situ leakage current measurement technique is a rapid and powerful tool to assess the reliability and quality of dielectric components and assemblies. Results obtained on populations of film capacitors and ceramic capacitors are presented. © 1998 John Wiley & Sons, Ltd.