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Highlighting of two types of defects in 1300 nm PBC laser diodes
Author(s) -
Bauduin B.,
Wallon J.,
Riviere D.,
Boulaire J. Y.
Publication year - 1996
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/(sici)1099-1638(199607)12:4<317::aid-qre29>3.0.co;2-b
Subject(s) - diode , materials science , optoelectronics , laser , leakage (economics) , optical microscope , active layer , optical power , substrate (aquarium) , layer (electronics) , laser diode , optics , scanning electron microscope , nanotechnology , composite material , physics , oceanography , geology , economics , macroeconomics , thin film transistor
Abstract Laser diodes of PBC (p‐substrate buried crescent) structure and emitting at 1300 nm, were subjected to calibrated electrostatic discharges (ESD). A failure analysis was then set up using a scanning optical microscope (SOM) and has allowed the localization of the damaged zones. The comparison of the results obtained with the electro‐optical characteristics has highlighted two types of complementary defects: (i) a so‐called optical type defect, since the optical power is significantly reduced, although leakage current has not occurred (active layer seriously damaged); (ii) a so‐called electrical type defect, since the leakage current increases, although the optical power is barely reduced (active layer weakly damaged).