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Comparison of conventional and pseudomorphic HEMTs performances by drain current transient spectroscopy and L.F. channel noise
Author(s) -
Saysset N.,
Labat N.,
Touboul A.,
Danto Y.,
Dumas J. M.
Publication year - 1996
Publication title -
quality and reliability engineering international
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.913
H-Index - 62
eISSN - 1099-1638
pISSN - 0748-8017
DOI - 10.1002/(sici)1099-1638(199607)12:4<309::aid-qre37>3.0.co;2-h
Subject(s) - high electron mobility transistor , optoelectronics , materials science , epitaxy , metalorganic vapour phase epitaxy , isothermal process , electronic engineering , transistor , electrical engineering , engineering , nanotechnology , physics , voltage , layer (electronics) , thermodynamics
This paper describes how in order to evaluate and compare the quality, in terms of trapping mechanisms, of conventional and pseudomorphic HEMTs (S‐HEMTs and PM‐HEMTs, respectively), isothermal drain current transients and G‐R noise analysis have been investigated. The influence of HEMT epitaxial structures, growth techniques (MBE or MOCVD) and surface treatments on electrical performances are then discussed. Finally, the experimental data demonstrates the complementarity of these two techniques.