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Studies on sulfur diffusion into Cu(In,Ga)Se 2 thin films
Author(s) -
Başol B. M.,
Halani A.,
Leidholm C.,
Norsworthy G.,
Kapur V. K.,
Swartzlander A.,
Matson R.
Publication year - 2000
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/(sici)1099-159x(200003/04)8:2<227::aid-pip308>3.0.co;2-g
Subject(s) - sulfur , diffusion , copper indium gallium selenide solar cells , stoichiometry , thin film , materials science , analytical chemistry (journal) , copper , chemistry , chemical engineering , metallurgy , nanotechnology , thermodynamics , chromatography , physics , engineering
A systematic study was carried out to investigate the distribution of sulfur (S) in CuInSe 2 (CIS) and Cu(In,Ga)Se 2 (CIGS) absorbers which were exposed to an H 2 S atmosphere at elevated temperature. Results demonstrated that S diffusion into CIS layers was a strong function of the original stoichiometry of the absorber before sulfurization. Sulfur inclusion into Cu‐rich CIS films was much more favorable compared to S diffusion in Cu‐poor layers. The sulfur distribution profile was also strongly influenced by the micro‐structure of the original CIS and CIGS layers, with sections of the films with smaller grains accommodating more S. Copyright © 2000 John Wiley & Sons, Ltd.