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Optimization of vapor post‐deposition processing for evaporated CdS/CdTe solar cells
Author(s) -
McCandless B. E.,
Youm I.,
Birkmire R. W.
Publication year - 1999
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/(sici)1099-159x(199901/02)7:1<21::aid-pip244>3.0.co;2-d
Subject(s) - cadmium telluride photovoltaics , materials science , annealing (glass) , scanning electron microscope , transmission electron microscopy , chemical vapor deposition , solar cell , optoelectronics , physical vapor deposition , thin film , analytical chemistry (journal) , chemical engineering , nanotechnology , composite material , chemistry , chromatography , engineering
The effects of thermal annealing in conjunction with CdCl 2 vapor heat treatment on the properties of CdTe/CdS thin films and devices deposited by physical vapor deposition are reported. Results are compared for three treatment variations: high‐temperature anneal only, high‐temperature anneal followed by CdCl 2 vapor heat treatment and CdCl 2 vapor heat treatment only. X‐ray diffraction, transmission electron microscopy and scanning electron microscopy show improved crystallographic properties of the CdTe film and reduced CdS/CdTe interdiffusion when a high‐temperature anneal is used prior to CdCl 2 treatment. The CdTe/CdS solar cells fabricated using an anneal at 550°C in argon prior to the CdCl 2 vapor heat treatment exhibited improved electrical characteristics compared to cells fabricated with no anneal step, yielding an open‐circuit voltage exceeding 850 mV. Copyright © 1999 John Wiley & Sons, Ltd.