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Solar cells with 11% efficiency on ribbon‐growth‐on‐substrate (RGS) silicon
Author(s) -
Hahn G.,
Zechner C.,
Bitnar B.,
Spiegel M.,
Jooss W.,
Fath P.,
Willeke G.,
Bucher E.,
Höfs H.U.
Publication year - 1998
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/(sici)1099-159x(199805/06)6:3<163::aid-pip219>3.0.co;2-h
Subject(s) - passivation , materials science , substrate (aquarium) , ribbon , silicon , energy conversion efficiency , aluminium , solar cell , crystalline silicon , short circuit , carrier lifetime , open circuit voltage , getter , optoelectronics , nanotechnology , layer (electronics) , voltage , composite material , electrical engineering , oceanography , geology , engineering
Solar cells have been prepared on Bayer ribbon‐growth‐on‐substrate (RGS) crystalline silicon. This low‐cost material contains a fair amount of impurities and crystal defects whose adverse effect on solar cell performance may be significantly reduced by gettering and bulk passivation treatments. This is demonstrated in solar cells by having a mechanical surface texturization, an aluminium gettering as well as a hydrogen passivation step which led to an open circuit voltage V oc of 538 mV, a short circuit current density J sc of 28·5 mA cm −2 , a fill factor of 72·4% and a confirmed record efficiency β of 11·1% (2×2 cm 2 ). Strong improvements in the diffusion length could be observed after the hydrogen treatment. © 1998 John Wiley & Sons, Ltd.