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Reaction analysis of the formation of CuInSe 2 films in a physical vapor deposition reactor
Author(s) -
Orbey N.,
Norsworthy G.,
Birkmire R. W.,
Russell T. W. F.
Publication year - 1998
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/(sici)1099-159x(199803/04)6:2<79::aid-pip203>3.0.co;2-n
Subject(s) - chemical vapor deposition , deposition (geology) , chemistry , chemical reactor , substrate (aquarium) , chemical engineering , kinetics , chemical kinetics , chemical reaction , physical vapor deposition , analytical chemistry (journal) , thin film , materials science , environmental chemistry , nanotechnology , organic chemistry , geology , paleontology , oceanography , physics , quantum mechanics , sediment , engineering
The reaction kinetics for the formation of CuInSe 2 films by reacting Cu/In layers with elemental selenium are compared with those for H 2 Se. The species mole fractions as a function of time in a single Se‐source physical vapor deposition (PVD) reactor are found to be essentially the same as those obtained in a chemical vapor deposition (CVD) reactor with flowing H 2 Se, indicating that the same chemical equation representation can be used in both cases. The chemical engineering reaction analysis model developed previously by us is shown to predict adequately the experimental data in both reactors. The model is employed to predict three‐source behavior. The effects of rate of species delivery and substrate temperature on the time to make CuInSe 2 is presented quantitatively. © 1998 John Wiley & Sons, Ltd.