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Uniform pyramid formation on alkaline‐etched polished monocrystalline (100) silicon wafers
Author(s) -
Hylton Jessica D.,
Kinderman Ronald,
Burgers Antonius R.,
Sinke Wim C.,
Bressers Peter M. M. C.
Publication year - 1996
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/(sici)1099-159x(199611/12)4:6<435::aid-pip150>3.0.co;2-5
Subject(s) - monocrystalline silicon , wafer , oxidizing agent , materials science , etching (microfabrication) , pyramid (geometry) , silicon , yield (engineering) , polishing , optoelectronics , metallurgy , optics , composite material , chemistry , physics , organic chemistry , layer (electronics)
Pyramidal texturing of monocrystalline silicon using alkaline etchants depends strongly upon the initial condition of the wafer surface and upon etching parameters. Texturization of polished wafers is often incomplete, with non‐textured areas arising to yield high values of reflectance. A new technique is introduced for uniform pyramid formation on polished wafers. Nitrogen is used to expel dissolved oxygen in the etch solution, since it has been observed that oxidizing agents act to encourage polished etch surfaces.